Samsung Electronics has announced that it will begin mass producing the industry’s first 4 GB DRAM package based on the second-generation High Bandwidth Memory (HBM2) interface for use in high-performance computing (HPC), advanced graphics and network systems, as well as enterprise servers.
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LogBook : Fastest 4GB HBM2 DRAM from Samsung
It calls the industry’s first 4GB DRAM package based on the second-generation High Bandwidth Memory (HBM2) interface.
Samsung said to offer DRAM performance that is “seven times faster than the current DRAM performance limit”.
The new RAM is meant for use in high performance computing (HPC), advanced graphics and network systems, as well as enterprise servers.
“By mass producing next-generation HBM2 DRAM, we can contribute much more to the rapid adoption of next-generation HPC systems by global IT companies,” said Sewon Chun, senior vice president, Memory Marketing, Samsung Electronics in a statement.
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Newly introduced 4GB HBM2 DRAM based on the company’s 20-nanometer process.
The new DRAM features 256GBps of bandwidth, which is double that of a HBM1 DRAM package.
Samsung’s 4GB HBM2 also enables enhanced power efficiency by doubling the bandwidth per watt over a 4Gb-GDDR5-based solution, and embeds ECC (error-correcting code) functionality to offer high reliability.
Samsung plans to produce an 8GB HBM2 DRAM package later in 2016, the company disclosed.
By specifying 8GB HBM2 DRAM in graphics cards, designers will be able to enjoy a space savings of more than 95%, compared to using GDDR5 DRAM, offering more optimal solutions for compact devices that require high-level graphics computing capabilities, the company said.
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